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APTGT75TA120PG

IGBT MODULE 1200V 100A 350W SP6P


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT75TA120PG
  • Package: SP6
  • Datasheet: PDF
  • Stock: 313
  • Description: IGBT MODULE 1200V 100A 350W SP6P (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 350W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 21
JESD-30 Code R-XUFM-X21
Number of Elements 6
Configuration Three Phase
Case Connection ISOLATED
Power - Max 350W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 5.34nF
Turn On Time 335 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.34nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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