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APTM100UM45FAG

MOSFET N-CH 1000V 215A SP6


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTM100UM45FAG
  • Package: SP6
  • Datasheet: PDF
  • Stock: 610
  • Description: MOSFET N-CH 1000V 215A SP6 (Kg)

Details

Tags

Parameters
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 107.5A, 10V
Vgs(th) (Max) @ Id 5V @ 30mA
Input Capacitance (Ciss) (Max) @ Vds 42700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 215A Tc
Gate Charge (Qg) (Max) @ Vgs 1602nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 215A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 3200 mJ
Height 15mm
Length 108mm
Width 62mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 52mOhm
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 2
JESD-30 Code R-PUFM-X2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5000W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5kW
See Relate Datesheet

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