Parameters | |
---|---|
Case Connection | ISOLATED |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 52m Ω @ 107.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 30mA |
Input Capacitance (Ciss) (Max) @ Vds | 42700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 215A Tc |
Gate Charge (Qg) (Max) @ Vgs | 1602nC @ 10V |
Rise Time | 14ns |
Drain to Source Voltage (Vdss) | 1000V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 55 ns |
Turn-Off Delay Time | 140 ns |
Continuous Drain Current (ID) | 215A |
Gate to Source Voltage (Vgs) | 30V |
Avalanche Energy Rating (Eas) | 3200 mJ |
Height | 15mm |
Length | 108mm |
Width | 62mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SP6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2006 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 52mOhm |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Pin Count | 2 |
JESD-30 Code | R-PUFM-X2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 5000W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 5kW |