AR4PJ-M3/86A
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | eSMP® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Base Part Number | AR4PJ |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Common Anode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Avalanche |
| Current - Reverse Leakage @ Vr | 10μA @ 600V |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 4A |
| Case Connection | CATHODE |
| Forward Current | 4A |
| Operating Temperature - Junction | -55°C~175°C |
| Max Surge Current | 65A |
| Output Current-Max | 2A |
| Current - Average Rectified (Io) | 2A DC |
| Max Reverse Voltage (DC) | 600V |
| Average Rectified Current | 2A |
| Number of Phases | 1 |
| Reverse Recovery Time | 140 ns |
| Peak Reverse Current | 600nA |
| Max Repetitive Reverse Voltage (Vrrm) | 600V |
| JEDEC-95 Code | TO-277A |
| Capacitance @ Vr, F | 77pF @ 4V 1MHz |
| Peak Non-Repetitive Surge Current | 65A |
| Reverse Voltage | 600V |
| Recovery Time | 110 ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
