Parameters | |
---|---|
Polarity/Channel Type | NPN |
Transistor Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA 2.7V |
Gain | 12.5dB ~ 14dB |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Current - Collector (Ic) (Max) | 32mA |
Power Dissipation-Max (Abs) | 0.2W |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Noise Figure (dB Typ @ f) | 1dB ~ 1.3dB @ 900MHz |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-253-4, TO-253AA |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY, LOW NOISE |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | AT32011 |
JESD-30 Code | R-PDSO-G4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Power - Max | 200mW |
Transistor Application | SWITCHING |