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AT-32011-TR2G

Transistors RF Bipolar Transistor Si Low Current


  • Manufacturer: Broadcom Limited
  • Nocochips NO: 107-AT-32011-TR2G
  • Package: TO-253-4, TO-253AA
  • Datasheet: -
  • Stock: 737
  • Description: Transistors RF Bipolar Transistor Si Low Current (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOW NOISE
Subcategory Other Transistors
Voltage - Rated DC 5.5V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 32mA
Frequency 30GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number AT32011
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 200mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 5.5V
Max Collector Current 32mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 2.7V
Collector Emitter Breakdown Voltage 5.5V
Gain 12.5dB ~ 14dB
Collector Base Voltage (VCBO) 11V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 32mA
Noise Figure (dB Typ @ f) 1dB ~ 1.3dB @ 900MHz
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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