Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-253-4, TO-253AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY, LOW NOISE |
Subcategory | Other Transistors |
Voltage - Rated DC | 5.5V |
Max Power Dissipation | 200mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 32mA |
Frequency | 30GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | AT32011 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation | 200mW |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 10 GHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 5.5V |
Max Collector Current | 32mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA 2.7V |
Collector Emitter Breakdown Voltage | 5.5V |
Gain | 12.5dB ~ 14dB |
Collector Base Voltage (VCBO) | 11V |
Emitter Base Voltage (VEBO) | 1.5V |
Continuous Collector Current | 32mA |
Noise Figure (dB Typ @ f) | 1dB ~ 1.3dB @ 900MHz |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |