Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | Die |
Number of Pins | 2 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Tray |
Published | 2009 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 500mW |
Terminal Position | UPPER |
Frequency | 8GHz |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation | 500mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 8 GHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 12V |
Max Collector Current | 60mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA 8V |
Collector Emitter Breakdown Voltage | 12V |
Gain | 8dB ~ 17dB |
Transition Frequency | 8000MHz |
Collector Base Voltage (VCBO) | 20V |
Emitter Base Voltage (VEBO) | 1.5V |
Continuous Collector Current | 60mA |
Noise Figure (dB Typ @ f) | 1.4dB ~ 3dB @ 1GHz ~ 4GHz |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |