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AT-41511-TR1G

AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150


  • Manufacturer: Broadcom Limited
  • Nocochips NO: 107-AT-41511-TR1G
  • Package: TO-253-4, TO-253AA
  • Datasheet: PDF
  • Stock: 448
  • Description: AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150 (Kg)

Details

Tags

Parameters
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 1.5V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Frequency 10GHz
Base Part Number AT41511
Number of Elements 1
Configuration SINGLE
Power Dissipation 225mW
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Collector Emitter Breakdown Voltage 12V
Gain 11dB ~ 15.5dB
Transition Frequency 10GHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
hFE Min 30
Continuous Collector Current 50mA
Noise Figure (dB Typ @ f) 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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