AT-41535G
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD (35 micro-X) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| HTS Code | 8541.21.00.75 |
| Terminal Position | RADIAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-MRDB-F4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 500mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA 8V |
| Gain | 10dB ~ 18dB |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Current - Collector (Ic) (Max) | 60mA |
| Frequency - Transition | 8GHz |
| Highest Frequency Band | S B |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 3dB @ 1GHz ~ 4GHz |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
