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AT-42000-GP4

Transistors RF Bipolar Transistor Si


  • Manufacturer: Broadcom Limited
  • Nocochips NO: 107-AT-42000-GP4
  • Package: Die
  • Datasheet: PDF
  • Stock: 303
  • Description: Transistors RF Bipolar Transistor Si (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Number of Pins 2
Operating Temperature 200°C TJ
Packaging Tray
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 600mW
Frequency 9GHz
Power Dissipation 600mW
Gain Bandwidth Product 9 GHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 35mA 8V
Collector Emitter Breakdown Voltage 12V
Gain 10.5dB ~ 14dB
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 80mA
Noise Figure (dB Typ @ f) 1.9dB ~ 3dB @ 2GHz ~ 4GHz
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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