AT-42010
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD (100 mil) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Gold (Au) |
| Additional Feature | HIGH RELIABILITY, LOW NOISE |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Terminal Position | QUAD |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-CQMW-F4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | EMITTER |
| Power - Max | 600mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 35mA 8V |
| Gain | 10dB ~ 13.5dB |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Current - Collector (Ic) (Max) | 80mA |
| Transition Frequency | 8000MHz |
| Frequency - Transition | 8GHz |
| Power Dissipation-Max (Abs) | 0.6W |
| Highest Frequency Band | C B |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 3dB @ 2GHz ~ 4GHz |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
