Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2008 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY, LOW NOISE |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Terminal Position | UNSPECIFIED |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | X-CXMW-F4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 600mW |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 35mA 8V |
Gain | 10dB ~ 13.5dB |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Current - Collector (Ic) (Max) | 80mA |
Transition Frequency | 8000MHz |
Frequency - Transition | 8GHz |
Power Dissipation-Max (Abs) | 0.6W |
Highest Frequency Band | C B |
Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 2GHz ~ 4GHz |
RoHS Status | RoHS Compliant |
Mounting Type | Surface Mount |
Package / Case | 4-SMD (35 micro-X) |
Surface Mount | YES |