Parameters | |
---|---|
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 1.5V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | pHEMT FET |
Continuous Drain Current (ID) | 25mA |
Gate to Source Voltage (Vgs) | -3V |
Gain | 12dB |
DS Breakdown Voltage-Min | 3V |
Power - Output | 5dBm |
FET Technology | HIGH ELECTRON MOBILITY |
Noise Figure | 0.5dB |
Voltage - Test | 1.5V |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Contact Plating | Gold |
Mount | Surface Mount |
Package / Case | 4-SMD (77 Pack) |
Number of Pins | 4 |
Packaging | Bulk |
Published | 1999 |
JESD-609 Code | e4 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | LOW NOISE |
Subcategory | FET RF Small Signal |
Voltage - Rated DC | 3V |
Max Power Dissipation | 180mW |
Terminal Position | RADIAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | 45mA |
Frequency | 12GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Nominal Supply Current | 10mA |
Operating Mode | DEPLETION MODE |
Case Connection | SOURCE |