Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Number of Pins | 6 |
Packaging | Bulk |
Published | 2005 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | LOW NOISE |
HTS Code | 8541.21.00.75 |
Subcategory | FET RF Small Signal |
Voltage - Rated DC | 3V |
Max Power Dissipation | 180mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 40mA |
Frequency | 4GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DEPLETION MODE |
Power Dissipation | 180mW |
Current - Test | 15mA |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 3V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | pHEMT FET |
Continuous Drain Current (ID) | 40mA |
Collector Emitter Breakdown Voltage | -3.5V |
Gate to Source Voltage (Vgs) | -3V |
Gain | 15.8dB |
Drain Current-Max (Abs) (ID) | 0.04A |
Dual Supply Voltage | 3V |
DS Breakdown Voltage-Min | 3V |
Power - Output | 5dBm |
FET Technology | HIGH ELECTRON MOBILITY |
Noise Figure | 0.6dB |
Nominal Vgs | -3 V |
Voltage - Test | 2V |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |