Parameters | |
---|---|
Current Rating | 1A |
Frequency | 2GHz |
Number of Elements | 1 |
Configuration | SINGLE |
Nominal Supply Current | 280mA |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.5W |
Case Connection | SOURCE |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 4.5V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | E-pHEMT |
Continuous Drain Current (ID) | 1A |
JEDEC-95 Code | MO-229 |
Gate to Source Voltage (Vgs) | 800mV |
Gain | 15dB |
Drain Current-Max (Abs) (ID) | 1A |
DS Breakdown Voltage-Min | 7V |
Power - Output | 29dBm |
FET Technology | HIGH ELECTRON MOBILITY |
Noise Figure | 1dB |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Package / Case | 8-WFDFN Exposed Pad |
Number of Pins | 8 |
Packaging | Bulk |
Published | 2014 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Subcategory | FET RF Small Signal |
Voltage - Rated DC | 4.5V |
Max Power Dissipation | 3.5W |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |