ATF-531P8-BLK
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Package / Case | 8-WFDFN Exposed Pad |
| Number of Pins | 8 |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Voltage - Rated | 7V |
| Subcategory | FET RF Small Signal |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 300mA |
| Frequency | 2GHz |
| Base Part Number | ATF-531P8 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Nominal Supply Current | 135mA |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Case Connection | SOURCE |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 4V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | E-pHEMT |
| Continuous Drain Current (ID) | 300mA |
| JEDEC-95 Code | MO-229 |
| Gate to Source Voltage (Vgs) | 1V |
| Gain | 20dB |
| Drain Current-Max (Abs) (ID) | 0.3A |
| Dual Supply Voltage | 4V |
| DS Breakdown Voltage-Min | 7V |
| Power - Output | 24.5dBm |
| FET Technology | HIGH ELECTRON MOBILITY |
| Noise Figure | 0.6dB |
| Nominal Vgs | 300 mV |
| Height | 800μm |
| Length | 2.1mm |
| Width | 2.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
