Parameters | |
---|---|
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 13mOhm |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 70W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 70W |
Case Connection | DRAIN |
Turn On Delay Time | 35 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 13m Ω @ 35A, 10V |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 70A Ta |
Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
Rise Time | 430ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 500 ns |
Turn-Off Delay Time | 420 ns |
Continuous Drain Current (ID) | 70A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 280A |
Height | 1.5mm |
Length | 6.5mm |
Width | 7.3mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 18 hours ago) |
Mounting Type | Surface Mount |
Package / Case | ATPAK (2 leads+tab) |
Surface Mount | YES |