Parameters | |
---|---|
Diode Type | Avalanche |
Current - Reverse Leakage @ Vr | 10μA @ 800V |
Voltage - Forward (Vf) (Max) @ If | 2.5V @ 2A |
Case Connection | CATHODE |
Forward Current | 2A |
Operating Temperature - Junction | -55°C~175°C |
Max Surge Current | 30A |
Application | ULTRA FAST RECOVERY |
Current - Average Rectified (Io) | 1.3A DC |
Forward Voltage | 2.5V |
Max Reverse Voltage (DC) | 800V |
Average Rectified Current | 1.3A |
Number of Phases | 1 |
Reverse Recovery Time | 75 ns |
Peak Reverse Current | 270nA |
Max Repetitive Reverse Voltage (Vrrm) | 800V |
JEDEC-95 Code | TO-277A |
Capacitance @ Vr, F | 29pF @ 4V 1MHz |
Peak Non-Repetitive Surge Current | 30A |
Reverse Voltage | 800V |
Max Forward Surge Current (Ifsm) | 30A |
Recovery Time | 50 ns |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-277, 3-PowerDFN |
Number of Pins | 3 |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | eSMP® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Additional Feature | FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
HTS Code | 8541.10.00.80 |
Subcategory | Rectifier Diodes |
Terminal Position | DUAL |
Terminal Form | FLAT |
Base Part Number | AU2PK |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Common Anode |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |