Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
Number of Pins | 7 |
Packaging | Tube |
Published | 2010 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Additional Feature | ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 300W |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-XSSO-G6 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
Turn On Delay Time | 19 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1m Ω @ 160A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7700pF @ 19V |
Current - Continuous Drain (Id) @ 25°C | 240A Tc |
Gate Charge (Qg) (Max) @ Vgs | 252nC @ 10V |
Rise Time | 240ns |
Fall Time (Typ) | 93 ns |
Turn-Off Delay Time | 86 ns |
Continuous Drain Current (ID) | 429A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 240A |
Drain to Source Breakdown Voltage | 24V |
Avalanche Energy Rating (Eas) | 230 mJ |
Height | 4.55mm |
Length | 10.35mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |