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AUIRF1324S-7P

INFINEON AUIRF1324S-7P MOSFET Transistor, N Channel, 429 A, 24 V, 800 ohm, 10 V, 2 V


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRF1324S-7P
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 954
  • Description: INFINEON AUIRF1324S-7P MOSFET Transistor, N Channel, 429 A, 24 V, 800 ohm, 10 V, 2 V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Packaging Tube
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Max Power Dissipation 300W
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-XSSO-G6
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1m Ω @ 160A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7700pF @ 19V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 252nC @ 10V
Rise Time 240ns
Fall Time (Typ) 93 ns
Turn-Off Delay Time 86 ns
Continuous Drain Current (ID) 429A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 240A
Drain to Source Breakdown Voltage 24V
Avalanche Energy Rating (Eas) 230 mJ
Height 4.55mm
Length 10.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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