AUIRF1405ZS
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0049Ohm |
| Mounting Type | Surface Mount |
| Drain to Source Breakdown Voltage | 55V |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Pulsed Drain Current-Max (IDM) | 600A |
| Height | 4.826mm |
| Number of Pins | 2 |
| Length | 10.668mm |
| Width | 9.65mm |
| Transistor Element Material | SILICON |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 230W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 230W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.9m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4780pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 150A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Rise Time | 110ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 82 ns |
| Turn-Off Delay Time | 48 ns |
| Factory Lead Time | 1 Week |
| Continuous Drain Current (ID) | 150A |
| Contact Plating | Tin |
| Threshold Voltage | 2V |
See Relate Datesheet
