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AUIRF2804STRL7P

MOSFET N-CH 40V 320A D2PAK-7


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRF2804STRL7P
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Datasheet: PDF
  • Stock: 709
  • Description: MOSFET N-CH 40V 320A D2PAK-7 (Kg)

Details

Tags

Parameters
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 330W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 160A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6930pF @ 25V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 240A
Drain-source On Resistance-Max 0.0016Ohm
Pulsed Drain Current-Max (IDM) 1360A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 1050 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
See Relate Datesheet

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