Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 3.8W Ta 94W Tc |
Element Configuration | Single |
Power Dissipation | 3.8W |
Turn On Delay Time | 9.6 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 82m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 21A Tc |
Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
Rise Time | 32ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 38 ns |
Turn-Off Delay Time | 49 ns |
Continuous Drain Current (ID) | 21A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 150V |
Height | 4.83mm |
Length | 10.67mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |