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AUIRF3805L

MOSFET N-CH 55V 160A TO262


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRF3805L
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 284
  • Description: MOSFET N-CH 55V 160A TO262 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 150 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 87 ns
Turn-Off Delay Time 93 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 890A
Avalanche Energy Rating (Eas) 940 mJ
Height 11.3mm
Length 10.67mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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