Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-7 |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 300W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
Turn On Delay Time | 23 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.6m Ω @ 140A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7820pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 160A Tc |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
Rise Time | 130ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 52 ns |
Turn-Off Delay Time | 80 ns |
Continuous Drain Current (ID) | 240A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 55V |
Avalanche Energy Rating (Eas) | 680 mJ |
Height | 11.3mm |
Length | 10.67mm |
Width | 4.83mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |