AUIRF7640S2TR
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SB |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.4W Ta 30W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 30W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 36m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A Ta 21A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6.2 ns |
| Turn-Off Delay Time | 6.3 ns |
| Continuous Drain Current (ID) | 5.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 77A |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 84A |
| Avalanche Energy Rating (Eas) | 57 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
