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AUIRF7647S2TR

MOSFET N-CH 100V 5.9A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRF7647S2TR
  • Package: DirectFET™ Isometric SC
  • Datasheet: PDF
  • Stock: 938
  • Description: MOSFET N-CH 100V 5.9A DIRECTFET (Kg)

Details

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Parameters
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 41W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
Case Connection DRAIN
Turn On Delay Time 5.5 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 31m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.9A Ta 24A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 8.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 7.9 ns
Continuous Drain Current (ID) 5.9A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.031Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 95A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SC
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
See Relate Datesheet

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