Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric SB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | HEXFET® |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
JESD-30 Code | R-XBCC-N2 |
Number of Elements | 1 |
Power Dissipation-Max | 2.4W Ta 30W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.4W |
Case Connection | DRAIN |
Turn On Delay Time | 3.8 ns |
FET Type | N-Channel |
Transistor Application | AMPLIFIER |
Rds On (Max) @ Id, Vgs | 62m Ω @ 8.9A, 10V |
Vgs(th) (Max) @ Id | 5V @ 25μA |
Input Capacitance (Ciss) (Max) @ Vds | 515pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4.1A Ta 14.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Rise Time | 6.4ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.6 ns |
Turn-Off Delay Time | 7.1 ns |
Continuous Drain Current (ID) | 14.4A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 77A |
Drain-source On Resistance-Max | 0.062Ohm |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 58A |
Height | 558.8μm |
Length | 4.826mm |
Width | 3.95mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |