Parameters | |
---|---|
Drain to Source Breakdown Voltage | 60V |
Max Junction Temperature (Tj) | 175°C |
Height | 740μm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric L8 |
Manufacturer Package Identifier | AUIRF7749L2TR |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
Series | Automotive, AEC-Q101, OptiMOS™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Channels | 1 |
Power Dissipation-Max | 3.8W Ta 341W Tc |
Power Dissipation | 3.8W |
Turn On Delay Time | 29 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.5m Ω @ 120A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 10655pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 36A Ta 345A Tc |
Gate Charge (Qg) (Max) @ Vgs | 275nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Turn-Off Delay Time | 72 ns |
Continuous Drain Current (ID) | 36A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 60V |