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AUIRF7749L2TR

AUIRF7749L2TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRF7749L2TR
  • Package: DirectFET™ Isometric L8
  • Datasheet: PDF
  • Stock: 374
  • Description: AUIRF7749L2TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 175°C
Height 740μm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Manufacturer Package Identifier AUIRF7749L2TR
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 3.8W Ta 341W Tc
Power Dissipation 3.8W
Turn On Delay Time 29 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5m Ω @ 120A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10655pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Ta 345A Tc
Gate Charge (Qg) (Max) @ Vgs 275nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 60V
See Relate Datesheet

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