AUIRF9Z34N
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Published | 2007 |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 68W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 68W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Rise Time | 55ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 41 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 19A |
| Threshold Voltage | -2V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -55V |
| Pulsed Drain Current-Max (IDM) | 68A |
| Height | 16.51mm |
| Length | 10.66mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
