Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 8.5mOhm |
Additional Feature | ULTRA LOW RESISTANCE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 4.4W Ta 125W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.5m Ω @ 45A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3001pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 14A Ta 75A Tc |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Rise Time | 12ns |
Drain to Source Voltage (Vdss) | 75V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 14A |
Gate to Source Voltage (Vgs) | 20V |
Pulsed Drain Current-Max (IDM) | 300A |
DS Breakdown Voltage-Min | 75V |
RoHS Status | RoHS Compliant |