AUIRFR5305TR
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Max Power Dissipation | 110W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 31A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Rise Time | 66ns |
| Fall Time (Typ) | 63 ns |
| Turn-Off Delay Time | 39 ns |
| Continuous Drain Current (ID) | 31A |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.065Ohm |
| Drain to Source Breakdown Voltage | 55V |
| Avalanche Energy Rating (Eas) | 280 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
