Parameters |
Factory Lead Time |
1 Week |
Mounting Type |
Surface Mount |
Package / Case |
TO-263-7, D2Pak (6 Leads + Tab) |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2015 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature |
AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY |
Subcategory |
FET General Purpose Power |
Technology |
MOSFET (Metal Oxide) |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G6 |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max |
380W Tc |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
1.25m Ω @ 195A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
9130pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
240A Tc |
Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
Drain to Source Voltage (Vdss) |
40V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
JEDEC-95 Code |
TO-263CB |
Drain Current-Max (Abs) (ID) |
240A |
Drain-source On Resistance-Max |
0.00125Ohm |
Pulsed Drain Current-Max (IDM) |
1610A |
DS Breakdown Voltage-Min |
40V |
Avalanche Energy Rating (Eas) |
290 mJ |
RoHS Status |
ROHS3 Compliant |