Parameters | |
---|---|
Packaging | Tube |
Published | 2010 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Additional Feature | ULTRA LOW RESISTANCE |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G6 |
Number of Elements | 1 |
Power Dissipation-Max | 370W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 370W |
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.6m Ω @ 160A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 9200pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 240A Tc |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Rise Time | 80ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 64 ns |
Turn-Off Delay Time | 100 ns |
Continuous Drain Current (ID) | 240A |
Contact Plating | Tin |
JEDEC-95 Code | TO-263CB |
Mount | Surface Mount |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0026Ohm |
Drain to Source Breakdown Voltage | 75V |
Mounting Type | Surface Mount |
Avalanche Energy Rating (Eas) | 320 mJ |
Height | 4.83mm |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
Length | 10.67mm |
Width | 9.65mm |
Radiation Hardening | No |
Number of Pins | 7 |
RoHS Status | ROHS3 Compliant |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |