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AUIRFS3107-7P

MOSFET N-CH 75V 230A D2PAK-7P


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRFS3107-7P
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 465
  • Description: MOSFET N-CH 75V 230A D2PAK-7P (Kg)

Details

Tags

Parameters
Packaging Tube
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 370W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 370W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 160A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 50V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 64 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 240A
Contact Plating Tin
JEDEC-95 Code TO-263CB
Mount Surface Mount
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 75V
Mounting Type Surface Mount
Avalanche Energy Rating (Eas) 320 mJ
Height 4.83mm
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Length 10.67mm
Width 9.65mm
Radiation Hardening No
Number of Pins 7
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
See Relate Datesheet

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