Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 43A Tc |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Rise Time | 40ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 47 ns |
Turn-Off Delay Time | 49 ns |
Continuous Drain Current (ID) | 43A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Height | 4.83mm |
Length | 10.67mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 71W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 71W |
Case Connection | DRAIN |
Turn On Delay Time | 6.3 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 15.8m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 50μA |