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AUIRFS3806

MOSFET N-CH 60V 43A D2PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRFS3806
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 684
  • Description: MOSFET N-CH 60V 43A D2PAK (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 50V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 43A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 6.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
See Relate Datesheet

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