AUIRFS6535
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2015 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation-Max | 210W Tc |
| Power Dissipation | 210W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 185m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2340pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 19A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 300V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
