Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Supplier Device Package | D2PAK |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | HEXFET® |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 99W Tc |
Element Configuration | Single |
Power Dissipation | 99W |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 3.3mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3183pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 123A Tc |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
Rise Time | 77ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 43 ns |
Turn-Off Delay Time | 26 ns |
Continuous Drain Current (ID) | 123A |
Gate to Source Voltage (Vgs) | 20V |
Input Capacitance | 3.183nF |
Drain to Source Resistance | 2.6mOhm |
Rds On Max | 3.3 mΩ |
Nominal Vgs | 3 V |
Height | 4.83mm |
Length | 10.67mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |