AUIRFU4292
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2015 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation-Max | 100W Tc |
| Power Dissipation | 100W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 345m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 705pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8.4 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 9.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 250V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
