AUIRFU540Z
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Supplier Device Package | I-PAK |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 91W Tc |
| Power Dissipation | 91W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 21A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1690pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
| Rise Time | 42ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 34 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 35A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Input Capacitance | 1.69nF |
| Drain to Source Resistance | 22.5mOhm |
| Rds On Max | 28.5 mΩ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
