Parameters | |
---|---|
IGBT Type | NPT |
Gate Charge | 55nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | 26ns/110ns |
Switching Energy | 220μJ (on), 215μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Fall Time-Max (tf) | 16ns |
Height | 20.7mm |
Length | 15.87mm |
Width | 5.31mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | HIGH RELIABILITY |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 308W |
Number of Elements | 1 |
Rise Time-Max | 11ns |
Element Configuration | Single |
Power Dissipation | 308W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.55V |
Max Collector Current | 60A |
Reverse Recovery Time | 42 ns |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.15V |
Turn On Time | 34 ns |
Test Condition | 390V, 22A, 3.3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 35A |
Turn Off Time-Nom (toff) | 142 ns |