Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Published | 2011 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 31ns |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 250W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 89ns |
JEDEC-95 Code | TO-247AC |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 48A |
Power Dissipation-Max (Abs) | 250W |
Turn On Time | 64 ns |
Test Condition | 400V, 24A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 24A |
Turn Off Time-Nom (toff) | 164 ns |
Gate Charge | 50nC |
Current - Collector Pulsed (Icm) | 72A |
Td (on/off) @ 25°C | 41ns/104ns |
Switching Energy | 115μJ (on), 600μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 41ns |
RoHS Status | ROHS3 Compliant |