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AUIRGP4066D1-E

AUIRGP4066D1-E datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRGP4066D1-E
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 623
  • Description: AUIRGP4066D1-E datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 454W
Number of Elements 1
Rise Time-Max 100ns
Element Configuration Single
Power Dissipation 454W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 50 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 200 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 140A
Reverse Recovery Time 240ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 115 ns
Test Condition 400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 320 ns
IGBT Type Trench
Gate Charge 225nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 50ns/200ns
Switching Energy 4.24mJ (on), 2.17mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 80ns
Height 20.7mm
Length 15.87mm
Width 5.13mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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