Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 247 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 750W |
JESD-30 Code | R-PSIP-T3 |
Number of Elements | 1 |
Rise Time-Max | 82ns |
Element Configuration | Single |
Power Dissipation | 750W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 69 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 198 ns |
Collector Emitter Voltage (VCEO) | 2.05V |
Max Collector Current | 240A |
Reverse Recovery Time | 360 ns |
JEDEC-95 Code | TO-274AA |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.05V |
Turn On Time | 127 ns |
Test Condition | 400V, 120A, 4.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 120A |
Turn Off Time-Nom (toff) | 281 ns |
IGBT Type | Trench |
Gate Charge | 360nC |
Current - Collector Pulsed (Icm) | 360A |
Td (on/off) @ 25°C | 69ns/198ns |
Switching Energy | 8.2mJ (on), 2.9mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 48ns |
Height | 20.8mm |
Length | 16.1mm |
Width | 5.5mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |