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AUIRGR4045D

AUIRGR4045D datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRGR4045D
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 433
  • Description: AUIRGR4045D datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 77W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGR4045
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 15ns
Element Configuration Single
Power Dissipation 77W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 12A
Reverse Recovery Time 74 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 38 ns
Test Condition 400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Turn Off Time-Nom (toff) 127 ns
IGBT Type Trench
Gate Charge 19.5nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 27ns/75ns
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 22ns
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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