Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2004 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 39ns |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 370W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 78A |
Power Dissipation-Max (Abs) | 370W |
Turn On Time | 74 ns |
Test Condition | 400V, 30A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 30A |
Turn Off Time-Nom (toff) | 237 ns |
IGBT Type | NPT |
Gate Charge | 102nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | 46ns/185ns |
Switching Energy | 350μJ (on), 825μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Fall Time-Max (tf) | 42ns |
RoHS Status | ROHS3 Compliant |