Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 15ns |
Configuration | SINGLE WITH BUILT-IN DIODE |
Input Type | Standard |
Power - Max | 77W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 74ns |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 12A |
Power Dissipation-Max (Abs) | 77W |
Turn On Time | 38 ns |
Test Condition | 400V, 6A, 47 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 6A |
Turn Off Time-Nom (toff) | 127 ns |
IGBT Type | Trench |
Gate Charge | 19.5nC |
Current - Collector Pulsed (Icm) | 18A |
Td (on/off) @ 25°C | 27ns/75ns |
Switching Energy | 56μJ (on), 122μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 22ns |
RoHS Status | RoHS Compliant |