AUIRL7766M2TR
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric M4 |
| Number of Pins | 9 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta 62.5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 62.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 31A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5305pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 4.5V |
| Rise Time | 24ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 49 ns |
| Turn-Off Delay Time | 120 ns |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 51A |
| Drain-source On Resistance-Max | 0.01Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 204A |
| Avalanche Energy Rating (Eas) | 237 mJ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
