AUIRLR014N
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 5V |
| Rise Time | 47ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 55V |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 28W Tc |
| Element Configuration | Single |
| Power Dissipation | 28W |
| Turn On Delay Time | 6.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 140m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 265pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
See Relate Datesheet
