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AUIRLR024ZTRL

MOSFET N CH 55V 16A DPAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRLR024ZTRL
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 301
  • Description: MOSFET N CH 55V 16A DPAK (Kg)

Details

Tags

Parameters
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection DRAIN
Turn On Delay Time 8.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 9.9nC @ 5V
Rise Time 43ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.058Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 64A
Avalanche Energy Rating (Eas) 25 mJ
RoHS Status RoHS Compliant
See Relate Datesheet

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