Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 105MOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 79W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 79W |
Case Connection | DRAIN |
Turn On Delay Time | 7.2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 105m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 17A Tc |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 5V |
Rise Time | 53ns |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 26 ns |
Turn-Off Delay Time | 30 ns |
Continuous Drain Current (ID) | 17A |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 60A |
Height | 2.3876mm |
Length | 6.7056mm |
Width | 6.223mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |