Parameters |
Drain to Source Breakdown Voltage |
100V |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2011 |
Series |
Automotive, AEC-Q101, HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
Subcategory |
FET General Purpose Power |
Technology |
MOSFET (Metal Oxide) |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Power Dissipation-Max |
370W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
370W |
Case Connection |
DRAIN |
Turn On Delay Time |
74 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
4.3m Ω @ 110A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
11360pF @ 50V |
Current - Continuous Drain (Id) @ 25°C |
180A Tc |
Gate Charge (Qg) (Max) @ Vgs |
130nC @ 4.5V |
Rise Time |
330ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
170 ns |
Turn-Off Delay Time |
110 ns |
Continuous Drain Current (ID) |
180A |
Gate to Source Voltage (Vgs) |
16V |