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AUIRLS4030-7P

MOSFET N-CH 100V 190A D2PAK-7P


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRLS4030-7P
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 499
  • Description: MOSFET N-CH 100V 190A D2PAK-7P (Kg)

Details

Tags

Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series Automotive, AEC-Q101, HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 370W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 370W
Case Connection DRAIN
Turn On Delay Time 53 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11490pF @ 50V
Current - Continuous Drain (Id) @ 25°C 190A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 87 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 190A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0039Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 320 mJ
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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